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| SI6543DQ Vishay Siliconix Dual N- and P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) N-Channel 30 rDS(on) (W) 0.065 @ VGS = 10 V 0.095 @ VGS = 4.5 V ID (A) "3.9 "3.1 "2.5 "1.8 P-Channel -30 0.085 @ VGS = -10 V 0.19 @ VGS = -4.5 V D1 S2 TSSOP-8 D1 S1 S1 G1 1 2 3 4 Top View S1 N-Channel MOSFET D2 P-Channel MOSFET D 8 D2 S2 S2 G2 G1 G2 SI6543DQ 7 6 5 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg N-Channel 30 "20 "3.9 "3.1 "20 1.25 1.0 P-Channel -30 "20 "2.5 "2.1 "20 -1.25 Unit V A W 0.64 -55 to 150 _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Symbol RthJA N- or P-Channel 125 Unit _C/W Notes a. Surface Mounted on FR4 Board, t v 10 sec. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70181 S-49534--Rev. C, 06-Oct-97 www.vishay.com S FaxBack 408-970-5600 2-1 SI6543DQ Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V Zero Gate Voltage Drain Current Z G Vl DiC IDSS VDS = -30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55_C VDS = -30 V, VGS = 0 V, TJ = 55_C On-State Drain Currenta ID(on) VDS w 5 V, VGS = 10 V VDS w -5 V, VGS = -10 V VGS = 10 V, ID = 3.9 A Drain-Source On-State Resistancea DiS OS Ri rDS(on) VGS = -10 V, ID = 2.5 A VGS = 4.5 V, ID = 3.1 A VGS = -4.5 V, ID = 1.8 A Forward Transconductancea gfs VDS = 15 V, ID = 3.9 A VDS = -15 V, ID = - 2.5 A IS = 1.25 A, VGS = 0 V IS = -1.25 A, VGS = 0 V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 15 A -15 0.043 0.066 0.075 0.125 7 S 5 0.8 0.8 1.2 V -1.2 0.065 0.085 0.095 0.19 W 1.0 V -1.0 "100 "100 1 -1 25 -25 mA A nA Symbol Test Condition Min Typ Max Unit Gate-Body Leakage IGSS Diode Forward Voltagea VSD Dynamicb N-Ch Total Gate Charge Qg N-Channel N Ch Channel l VDS = 10 V, VGS = 10 V, ID = 3.9 A P-Channel VDS = -10 V VGS = -10 V ID = -2.5 A 10 V, 10 V, 25 Gate-Drain Charge Qgd P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch Turn-On Delay Time td(on) N Ch l N-Channel VDD = 10 V, RL = 10 W ID ^ 1 A, VGEN = 10 V, RG = 6 W P-Channel VDD = -10 V RL = 10 W 10 V, ID ^ -1 A, VGEN = -10 V, RG = 6 W 1 10 P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch Fall Time Source-Drain Reverse R R Recovery Time Ti tf IF = 1.25 A, di/dt = 100 A/ms IF = -1.25 A, di/dt = 100 A/ms P-Ch N-Ch P-Ch 9.8 8.7 2.1 nC C 1.9 1.6 1.3 9 7 6 9 18 14 6 8 48 46 15 15 18 18 27 ns 27 15 15 80 80 15 15 Gate-Source Charge Qgs Rise Time tr Turn-Off Delay Time td(off) trr Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. www.vishay.com S FaxBack 408-970-5600 2-2 Document Number: 70181 S-49534--Rev. C, 06-Oct-97 SI6543DQ Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 20 VGS = 10 thru 6 V 5V 16 I D - Drain Current (A) I D - Drain Current (A) 16 20 TC = -55_C 25_C N CHANNEL Transfer Characteristics 125_C 12 12 8 4V 8 4 3V 0 0 2 4 6 8 4 0 0 2 4 6 8 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.20 750 Capacitance r DS(on) - On-Resistance ( ) 0.16 C - Capacitance (pF) VGS = 4.5 V 0.12 600 Ciss 450 0.08 VGS = 10 V 0.04 300 Coss 150 Crss 0 0 4 8 12 16 20 0 0 5 10 15 20 25 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) 10 VDS = 10 V ID = 3.9 A Gate Charge 2.0 On-Resistance vs. Junction Temperature V GS - Gate-to-Source Voltage (V) r DS(on) - On-Resistance ( ) (Normalized) 8 1.6 VGS = 10 V ID = 3.9 A 6 1.2 4 0.8 2 0 0 2 4 6 8 10 0.4 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) www.vishay.com S FaxBack 408-970-5600 Document Number: 70181 S-49534--Rev. C, 06-Oct-97 2-3 SI6543DQ Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 20 TJ = 150_C 10 TJ = 25_C r DS(on) - On-Resistance ( ) 0.16 0.20 N CHANNEL On-Resistance vs. Gate-to-Source Voltage I S - Source Current (A) 0.12 ID = 3.9 A 0.08 0.04 0 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) 0.4 0.2 -0.0 V GS(th) Variance (V) Threshold Voltage 30 ID = 250 A Single Pulse Power 25 20 -0.2 -0.4 -0.6 -0.8 -1.0 -50 Power (W) 15 10 5 -25 0 25 50 75 100 125 150 0 0.01 0.1 1 Time (sec) 10 30 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 125_C/W 3. TJM - TA = PDMZthJA(t) 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 4. Surface Mounted 1 10 30 Square Wave Pulse Duration (sec) www.vishay.com S FaxBack 408-970-5600 2-4 Document Number: 70181 S-49534--Rev. C, 06-Oct-97 SI6543DQ Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 20 VGS = 10, 9, 8, 7, 6 V 16 I D - Drain Current (A) 5V 12 I D - Drain Current (A) 16 20 TC = -55_C P CHANNEL Transfer Characteristics 25_C 125_C 12 8 4V 4 3V 0 0 2 4 6 8 8 4 0 0 2 4 6 8 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.40 700 600 r DS(on) - On-Resistance ( ) 0.32 C - Capacitance (pF) 500 400 300 Capacitance Ciss 0.24 VGS = 4.5 V 0.16 VGS = 10 V 0.08 Coss 200 100 Crss 0 0 3 6 9 12 15 0 0 6 12 18 24 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) 10 VDS = 10 V ID = 2.5 A V GS - Gate-to-Source Voltage (V) Gate Charge 2.0 1.8 r DS(on) - On-Resistance ( ) (Normalized) 1.6 1.4 1.2 1.0 0.8 0.6 On-Resistance vs. Junction Temperature VGS = 10 V ID = 2.5 A 8 6 4 2 0 0 2 4 6 8 10 0.4 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) www.vishay.com S FaxBack 408-970-5600 Document Number: 70181 S-49534--Rev. C, 06-Oct-97 2-5 SI6543DQ Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 20 0.5 P CHANNEL On-Resistance vs. Gate-to-Source Voltage I S - Source Current (A) 10 r DS(on) - On-Resistance ( ) 0.4 0.3 ID = 2.5 A 0.2 TJ = 150_C TJ = 25_C 0.1 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.8 30 Single Pulse Power 0.6 ID = 250 A Power (W) 25 V GS(th) Variance (V) 0.4 20 0.2 15 0.0 10 -0.2 5 -0.4 -50 -25 0 25 50 75 100 125 150 0 0.01 0.1 1 Time (sec) 10 30 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 125_C/W 3. TJM - TA = PDMZthJA(t) 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 4. Surface Mounted 1 10 30 Square Wave Pulse Duration (sec) www.vishay.com S FaxBack 408-970-5600 2-6 Document Number: 70181 S-49534--Rev. C, 06-Oct-97 |
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